SKW20N60 Datasheet. Specs and Replacement

Type Designator: SKW20N60  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 179 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 107 pF

Package: TO247

  📄📄 Copy 

 SKW20N60 Substitution

- IGBTⓘ Cross-Reference Search

 

SKW20N60 datasheet

 ..1. Size:469K  infineon
skw20n60.pdf pdf_icon

SKW20N60

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high rugged... See More ⇒

 0.1. Size:853K  infineon
skw20n60hs.pdf pdf_icon

SKW20N60

SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes... See More ⇒

 0.2. Size:346K  infineon
skw20n60hsg.pdf pdf_icon

SKW20N60

SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, ... See More ⇒

 0.3. Size:315K  infineon
skw20n60g.pdf pdf_icon

SKW20N60

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness,... See More ⇒

Specs: SKW25N120, SKB02N60, SKB04N60, SKA06N60, SKB06N60, SKW10N60A, SKB15N60, SKW15N60, FGA25N120ANTD, SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, IKA03N120H2, IKB03N120H2, IKW03N120H2

Keywords - SKW20N60 transistor spec

 SKW20N60 cross reference
 SKW20N60 equivalent finder
 SKW20N60 lookup
 SKW20N60 substitution
 SKW20N60 replacement