SKW20N60 PDF and Equivalents Search

 

SKW20N60 Specs and Replacement

Type Designator: SKW20N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 179 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 107 pF

Package: TO247

 SKW20N60 Substitution

- IGBT ⓘ Cross-Reference Search

 

SKW20N60 datasheet

 ..1. Size:469K  infineon
skw20n60.pdf pdf_icon

SKW20N60

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high rugged... See More ⇒

 0.1. Size:853K  infineon
skw20n60hs.pdf pdf_icon

SKW20N60

SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes... See More ⇒

 0.2. Size:346K  infineon
skw20n60hsg.pdf pdf_icon

SKW20N60

SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, ... See More ⇒

 0.3. Size:315K  infineon
skw20n60g.pdf pdf_icon

SKW20N60

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness,... See More ⇒

Specs: SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , RJP30E2DPP-M0 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 .

Keywords - SKW20N60 transistor spec

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