SKW30N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKW30N60  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO247

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SKW30N60 datasheet

 ..1. Size:471K  infineon
 skw30n60.pdf pdf_icon

SKW30N60

SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedn

 0.1. Size:348K  infineon
 skw30n60hsg.pdf pdf_icon

SKW30N60

SKW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

 0.2. Size:338K  infineon
 skw30n60hs.pdf pdf_icon

SKW30N60

SKW30N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution

 0.3. Size:319K  infineon
 skw30n60g.pdf pdf_icon

SKW30N60

SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for E - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, t

MOSTRAR MÁS

Otros transistores... SKB02N60, SKB04N60, SKA06N60, SKB06N60, SKW10N60A, SKB15N60, SKW15N60, SKW20N60, BT40T60ANF, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, IKA03N120H2, IKB03N120H2, IKW03N120H2, IHW30N100R