All IGBT. SKW30N60 Datasheet

 

SKW30N60 IGBT. Datasheet pdf. Equivalent


   Type Designator: SKW30N60
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K30N60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 140 nC
   Package: TO247

 SKW30N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKW30N60 Datasheet (PDF)

 ..1. Size:471K  infineon
skw30n60.pdf

SKW30N60 SKW30N60

SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sG Designed for: E- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedn

 0.1. Size:348K  infineon
skw30n60hsg.pdf

SKW30N60 SKW30N60

SKW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

 0.2. Size:338K  infineon
skw30n60hs.pdf

SKW30N60 SKW30N60

SKW30N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution

 0.3. Size:319K  infineon
skw30n60g.pdf

SKW30N60 SKW30N60

SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

Datasheet: SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , IHW20N120R3 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R .

 

 
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