IKB01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKB01N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 6.3 nS
Coesⓘ - Capacitancia de salida, typ: 9.8 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IKB01N120H2 IGBT
IKB01N120H2 Datasheet (PDF)
ikb01n120h2.pdf
IKP01N120H2, IKB01N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for: C- SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D-PAK)- temperatu
ikb01n120h2 .pdf
IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior P-TO-220-3-45 - parallel s
Otros transistores... SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , GT30F126 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 .
History: IRGC100B60UB
History: IRGC100B60UB
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