IKB01N120H2 Todos los transistores

 

IKB01N120H2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKB01N120H2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 28 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 6.3 nS
   Coesⓘ - Capacitancia de salida, typ: 9.8 pF
   Paquete / Cubierta: TO263
 

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IKB01N120H2 datasheet

 ..1. Size:416K  infineon
 ikb01n120h2.pdf pdf_icon

IKB01N120H2

IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for C - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D -PAK) - temperatu

 ..2. Size:427K  infineon
 ikb01n120h2 .pdf pdf_icon

IKB01N120H2

IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior P-TO-220-3-45 - parallel s

Otros transistores... SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , FGA60N65SMD , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 .

History: SKW20N60 | IHY15N120R3 | SKB06N60

 

 

 


 
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