IKB01N120H2 Specs and Replacement
Type Designator: IKB01N120H2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 28 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 3.2 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 6.3 nS
Coesⓘ - Output Capacitance, typ: 9.8 pF
Package: TO263
IKB01N120H2 Substitution - IGBT ⓘ Cross-Reference Search
IKB01N120H2 datasheet
ikb01n120h2.pdf
IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for C - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D -PAK) - temperatu... See More ⇒
ikb01n120h2 .pdf
IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior P-TO-220-3-45 - parallel s... See More ⇒
Specs: SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , FGA60N65SMD , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 .
Keywords - IKB01N120H2 transistor spec
IKB01N120H2 cross reference
IKB01N120H2 equivalent finder
IKB01N120H2 lookup
IKB01N120H2 substitution
IKB01N120H2 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
irfp064n | tip31 transistor | 2sc1384 | mj21196g | irfb4115 | 21270 transistor | k3569 | irf640 datasheet


