All IGBT. IKB01N120H2 Datasheet

 

IKB01N120H2 Datasheet and Replacement


   Type Designator: IKB01N120H2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 28 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 3.2 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 6.3 nS
   Coesⓘ - Output Capacitance, typ: 9.8 pF
   Package: TO263
 
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IKB01N120H2 Datasheet (PDF)

 ..1. Size:416K  infineon
 ikb01n120h2.pdf pdf_icon

IKB01N120H2

IKP01N120H2, IKB01N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for: C- SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D-PAK)- temperatu

 ..2. Size:427K  infineon
 ikb01n120h2 .pdf pdf_icon

IKB01N120H2

IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior P-TO-220-3-45 - parallel s

Datasheet: SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , GT30F126 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 .

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