IKA03N120H2 Todos los transistores

 

IKA03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKA03N120H2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 29 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 8.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 5.2 nS
   Coesⓘ - Capacitancia de salida, typ: 24 pF
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de IKA03N120H2 IGBT

   - Selección ⓘ de transistores por parámetros

 

IKA03N120H2 Datasheet (PDF)

 ..1. Size:500K  infineon
 ika03n120h2.pdf pdf_icon

IKA03N120H2

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- TV Horizontal Line DeflectionGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parameter distributionPG-TO220-3-31PG-T

 0.1. Size:767K  infineon
 ika03n120h2g.pdf pdf_icon

IKA03N120H2

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2

Otros transistores... SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , RJP63F3DPP-M0 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T .

 

 
Back to Top

 


 
.