All IGBT. IKA03N120H2 Datasheet

 

IKA03N120H2 Datasheet and Replacement


   Type Designator: IKA03N120H2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K03H1202
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 29 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 8.2 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 5.2 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Qg ⓘ - Total Gate Charge, typ: 8.6 nC
   Package: TO220F
 

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IKA03N120H2 Datasheet (PDF)

 ..1. Size:500K  infineon
 ika03n120h2.pdf pdf_icon

IKA03N120H2

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- TV Horizontal Line DeflectionGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parameter distributionPG-TO220-3-31PG-T

 0.1. Size:767K  infineon
 ika03n120h2g.pdf pdf_icon

IKA03N120H2

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2

Datasheet: SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , RJP63F3DPP-M0 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T .

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