IKA03N120H2 Specs and Replacement
Type Designator: IKA03N120H2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 29 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8.2 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Package: TO220F
IKA03N120H2 Substitution - IGBT ⓘ Cross-Reference Search
IKA03N120H2 datasheet
ika03n120h2.pdf
IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-T... See More ⇒
ika03n120h2g.pdf
IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2... See More ⇒
Specs: SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , GT30F126 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T .
Keywords - IKA03N120H2 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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