IKA03N120H2 Datasheet. Specs and Replacement

Type Designator: IKA03N120H2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 29 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 8.2 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 5.2 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO220F

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IKA03N120H2 datasheet

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 ika03n120h2.pdf pdf_icon

IKA03N120H2

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-T... See More ⇒

 0.1. Size:767K  infineon
 ika03n120h2g.pdf pdf_icon

IKA03N120H2

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2... See More ⇒

Specs: SKB15N60, SKW15N60, SKW20N60, SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, RJP30E2DPP-M0, IKB03N120H2, IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T

Keywords - IKA03N120H2 transistor spec

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