IKB03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKB03N120H2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9.6 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 5.2 nS
Coesⓘ - Capacitancia de salida, typ: 24 pF
Paquete / Cubierta: TO263
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IKB03N120H2 Datasheet (PDF)
ikb03n120h2.pdf
IKB03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for frequency inverters for washingmachines, fans, pumps and vacuum cleanersGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parame
ikb03n120h2 .pdf
IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize
Otros transistores... SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , RJH30E2DPP , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T .
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