IKB03N120H2 Datasheet. Specs and Replacement

Type Designator: IKB03N120H2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 62.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 9.6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 5.2 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO263

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IKB03N120H2 datasheet

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IKB03N120H2

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parame... See More ⇒

 ..2. Size:405K  infineon
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IKB03N120H2

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize... See More ⇒

Specs: SKW15N60, SKW20N60, SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, IKA03N120H2, CRG60T60AK3HD, IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T

Keywords - IKB03N120H2 transistor spec

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