IKB03N120H2 Datasheet and Replacement
Type Designator: IKB03N120H2
Type: IGBT + Anti-Parallel Diode
Marking Code: K03H1202
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 62.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 9.6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Qg ⓘ - Total Gate Charge, typ: 22 nC
Package: TO263
IKB03N120H2 Datasheet (PDF)
ikb03n120h2.pdf
IKB03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for frequency inverters for washingmachines, fans, pumps and vacuum cleanersGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parame
ikb03n120h2 .pdf
IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize
Datasheet: SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , SGT50T65FD1PN , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T .
History: HM20N120T
Keywords - IKB03N120H2 transistor datasheet
IKB03N120H2 cross reference
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History: HM20N120T
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