All IGBT. IKB03N120H2 Datasheet

 

IKB03N120H2 Datasheet and Replacement


   Type Designator: IKB03N120H2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 62.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 9.6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 5.2 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Package: TO263
 

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IKB03N120H2 Datasheet (PDF)

 ..1. Size:650K  infineon
 ikb03n120h2.pdf pdf_icon

IKB03N120H2

IKB03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for frequency inverters for washingmachines, fans, pumps and vacuum cleanersGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parame

 ..2. Size:405K  infineon
 ikb03n120h2 .pdf pdf_icon

IKB03N120H2

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize

Datasheet: SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , SGT50T65FD1PN , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T .

History: SGH80N60UF

Keywords - IKB03N120H2 transistor datasheet

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