IHW30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IHW30N60TSoft Switching Series qLow Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diodeFeatures:C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers :G- very tight parameter distributionE- high ruggedness, temperature stable b

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, te

SiHW30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N65R5Data sheetIndustrial Power ControlIHW30N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru