IHW30N60T Todos los transistores

 

IHW30N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW30N60T
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 187 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 108 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IHW30N60T IGBT

   - Selección ⓘ de transistores por parámetros

 

IHW30N60T datasheet

 ..1. Size:540K  infineon
 ihw30n60t.pdf pdf_icon

IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with optimised diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable b

 0.1. Size:360K  infineon
 ihw30n60t-d10rev2 2.pdf pdf_icon

IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop technology with optimised diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, te

 6.1. Size:130K  vishay
 sihw30n60e.pdf pdf_icon

IHW30N60T

 7.1. Size:2100K  infineon
 ihw30n65r5.pdf pdf_icon

IHW30N60T

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N65R5 Data sheet Industrial Power Control IHW30N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru

MOSTRAR MÁS

Otros transistores... SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IKW75N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 .

 

 

 


 
↑ Back to Top
.