IHW30N60T
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW30N60T
Tipo de transistor: IGBT + Diode
Código de marcado: H30T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.5
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.7
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 21
nS
Coesⓘ - Capacitancia de salida, typ: 108
pF
Qgⓘ - Carga total de la puerta, typ: 167
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IHW30N60T
- IGBT
IHW30N60T
Datasheet (PDF)
..1. Size:540K infineon
ihw30n60t.pdf 
IHW30N60TSoft Switching Series qLow Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diodeFeatures:C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers :G- very tight parameter distributionE- high ruggedness, temperature stable b
0.1. Size:360K infineon
ihw30n60t-d10rev2 2.pdf
IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, te
6.1. Size:130K vishay
sihw30n60e.pdf
SiHW30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39
7.1. Size:2100K infineon
ihw30n65r5.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N65R5Data sheetIndustrial Power ControlIHW30N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
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