All IGBT. IHW30N60T Datasheet

 

IHW30N60T IGBT. Datasheet pdf. Equivalent

Type Designator: IHW30N60T

Marking Code: H30T60

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.5V

Maximum Collector Current |Ic|, A: 60A

Package: TO247

IHW30N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW30N60T Datasheet (PDF)

1.1. ihw30n60t-d10rev2 2.pdf Size:360K _infineon

IHW30N60T
IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable

1.2. ihw30n60t.pdf Size:540K _igbt_a

IHW30N60T
IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with optimised diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable b

 4.1. ihw30n90r rev2 2.pdf Size:298K _infineon

IHW30N60T
IHW30N60T

IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient in VCE

4.2. ihw30n110r3 1 2.pdf Size:1646K _infineon

IHW30N60T
IHW30N60T

IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features: Powerful monolithic body diode with low forward voltage designed for soft commutation only

 4.3. ihw30n100t rev2 7.pdf Size:313K _infineon

IHW30N60T
IHW30N60T

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature sta

4.4. ihw30n90t d10 rev2 3.pdf Size:288K _infineon

IHW30N60T
IHW30N60T

IHW30N90T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel diode TrenchStop and Fieldstop technology for 900 V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching capabili

 4.5. ihw30n100r rev2 2.pdf Size:324K _infineon

IHW30N60T
IHW30N60T

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C G E Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio

4.6. ihw30n120r2 rev1 5g.pdf Size:360K _infineon

IHW30N60T
IHW30N60T

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology

4.7. ihw30n160r2 rev2 1g.pdf Size:391K _infineon

IHW30N60T
IHW30N60T

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT t

4.8. ihw30n120r2.pdf Size:579K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages TM • TrenchStop and Fieldstop technology for 1200V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior

4.9. ihw30n100r.pdf Size:324K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C G E • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

4.10. ihw30n90t.pdf Size:288K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N90T Soft Switching Series q ® Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable behavior - easy parallel switching

4.11. ihw30n120r3.pdf Size:1983K _igbt_a

IHW30N60T
IHW30N60T

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology offering: - very tight parameter d

4.12. ihw30n110r3.pdf Size:2166K _igbt_a

IHW30N60T
IHW30N60T

Induction Heating Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Induction Heating Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, tempe

4.13. ihw30n100t.pdf Size:313K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N100T Soft Switching Series q ® Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C ® • TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, tem

4.14. ihw30n90r.pdf Size:298K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N90R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable behavior E - easy parallel switching capability due to positive temperature coefficient

4.15. ihw30n135r3.pdf Size:1984K _igbt_a

IHW30N60T
IHW30N60T

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage designed for soft commu

4.16. ihw30n160r2.pdf Size:391K _igbt_a

IHW30N60T
IHW30N60T

 IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior

Datasheet: SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IRGP4068D , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 .

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