All IGBT. IHW30N60T Datasheet

 

IHW30N60T IGBT. Datasheet pdf. Equivalent

Type Designator: IHW30N60T

Marking Code: H30T60

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.5V

Maximum Collector Current |Ic|, A: 60A

Package: TO247

IHW30N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW30N60T Datasheet (PDF)

1.1. ihw30n60t-d10rev2 2.pdf Size:360K _infineon

IHW30N60T
IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable

1.2. ihw30n60t.pdf Size:540K _igbt_a

IHW30N60T
IHW30N60T

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with optimised diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : G - very tight parameter distribution E - high ruggedness, temperature stable b

 2.1. sihw30n60e.pdf Size:130K _upd-mosfet

IHW30N60T
IHW30N60T

SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.125 • Reduced Switching and Conduction Losses Qg max. (nC) 130 • Ultra Low Gate Charge (Qg) Qgs (nC) 15 • Avalanche Energy Rated (UIS) Qgd (nC) 39

Datasheet: SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IRGP4068D , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 .

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