IHW40N60T
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW40N60T
Tipo de transistor: IGBT + Diode
Código de marcado: H40T60B
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 303
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.55
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.7
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
Coesⓘ - Capacitancia de salida, typ: 113
pF
Qgⓘ - Carga total de la puerta, typ: 215
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IHW40N60T
- IGBT
IHW40N60T
Datasheet (PDF)
..1. Size:454K infineon
ihw40n60t.pdf 
IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
0.1. Size:378K infineon
ihw40n60t-d20rev2 3.pdf
IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes
6.1. Size:788K infineon
ihw40n60rf ver2 3g.pdf
IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
6.2. Size:792K infineon
ihw40n60r 2 4.pdf
IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici
6.3. Size:2029K infineon
ihw40n60rf.pdf
IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp
6.4. Size:2060K infineon
ihw40n60r.pdf
IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper
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