IHW40N60T Datasheet. Specs and Replacement

Type Designator: IHW40N60T  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 303 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

Coesⓘ - Output Capacitance, typ: 113 pF

Package: TO247

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IHW40N60T datasheet

 ..1. Size:454K  infineon
ihw40n60t.pdf pdf_icon

IHW40N60T

IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution ... See More ⇒

 0.1. Size:378K  infineon
ihw40n60t-d20rev2 3.pdf pdf_icon

IHW40N60T

IHW40N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop -technology with anti-parallel diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggednes... See More ⇒

 6.1. Size:788K  infineon
ihw40n60rf ver2 3g.pdf pdf_icon

IHW40N60T

IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for ... See More ⇒

 6.2. Size:792K  infineon
ihw40n60r 2 4.pdf pdf_icon

IHW40N60T

IHW40N60R IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coeffici... See More ⇒

Specs: IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, SGT50T65FD1PN, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120

Keywords - IHW40N60T transistor spec

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