IHW40N60R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW40N60R  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 305 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: TO247

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IHW40N60R datasheet

 ..1. Size:792K  infineon
 ihw40n60r 2 4.pdf pdf_icon

IHW40N60R

IHW40N60R IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coeffici

 ..2. Size:2060K  infineon
 ihw40n60r.pdf pdf_icon

IHW40N60R

IGBT Reverse conducting IGBT IHW40N60R Resonant Switching Series Data sheet Industrial Power Control IHW40N60R Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temper

 0.1. Size:788K  infineon
 ihw40n60rf ver2 3g.pdf pdf_icon

IHW40N60R

IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 0.2. Size:2029K  infineon
 ihw40n60rf.pdf pdf_icon

IHW40N60R

IGBT Reverse conducting IGBT IHW40N60RF Resonant Switching Series Data sheet Industrial Power Control IHW40N60RF Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temp

MOSTRAR MÁS

Otros transistores... IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, IHW40N60T, IHW40T60, SGT40N60FD2PN, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120, IKW15N120T2, IKW25N120T2