All IGBT. IHW40N60R Datasheet

 

IHW40N60R Datasheet and Replacement


   Type Designator: IHW40N60R
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 305 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 80 pF
   Package: TO247
      - IGBT Cross-Reference

 

IHW40N60R Datasheet (PDF)

 ..1. Size:792K  infineon
ihw40n60r 2 4.pdf pdf_icon

IHW40N60R

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici

 ..2. Size:2060K  infineon
ihw40n60r.pdf pdf_icon

IHW40N60R

IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper

 0.1. Size:788K  infineon
ihw40n60rf ver2 3g.pdf pdf_icon

IHW40N60R

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for

 0.2. Size:2029K  infineon
ihw40n60rf.pdf pdf_icon

IHW40N60R

IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp

Datasheet: IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , CRG60T60AN3H , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 .

History: KGH25N120NDA | APT44GA60SD30 | FGM622S | SGL160N60UFD | KGH15N120NDA | SKB06N60 | TIG062E8

Keywords - IHW40N60R transistor datasheet

 IHW40N60R cross reference
 IHW40N60R equivalent finder
 IHW40N60R lookup
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