IHD06N60RA Todos los transistores

 

IHD06N60RA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHD06N60RA
   Tipo de transistor: IGBT + Diode
   Código de marcado: H06N60RA
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 88 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 28 pF
   Qgⓘ - Carga total de la puerta, typ: 42 nC
   Paquete / Cubierta: TO252
 

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IHD06N60RA Datasheet (PDF)

 ..1. Size:767K  infineon
ihd06n60ra.pdf pdf_icon

IHD06N60RA

IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos

 ..2. Size:819K  infineon
ihd06n60ra 1 3.pdf pdf_icon

IHD06N60RA

IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos

 5.1. Size:1918K  infineon
aihd06n60r.pdf pdf_icon

IHD06N60RA

AIHD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution

Otros transistores... IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , SGT50T65FD1PN , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 .

 

 
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