IHD06N60RA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHD06N60RA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 88 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 28 pF
Paquete / Cubierta: TO252
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IHD06N60RA Datasheet (PDF)
ihd06n60ra.pdf
IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos
ihd06n60ra 1 3.pdf
IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos
aihd06n60r.pdf
AIHD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
Otros transistores... IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , MBQ50T65FDSC , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 .
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