IHD06N60RA Datasheet. Specs and Replacement

Type Designator: IHD06N60RA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 88 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

Coesⓘ - Output Capacitance, typ: 28 pF

Package: TO252

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IHD06N60RA datasheet

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IHD06N60RA

IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos... See More ⇒

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IHD06N60RA

IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos... See More ⇒

 5.1. Size:1918K  infineon
 aihd06n60r.pdf pdf_icon

IHD06N60RA

AIHD06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution ... See More ⇒

Specs: IHW30N100T, IHW30N90T, IHW40N60T, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, RJP63F3DPP-M0, IHW15T120, IHW20T120, IKW15N120T2, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3

Keywords - IHD06N60RA transistor spec

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