IHD06N60RA Specs and Replacement
Type Designator: IHD06N60RA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 88 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Coesⓘ - Output Capacitance, typ: 28 pF
Package: TO252
IHD06N60RA Substitution - IGBT ⓘ Cross-Reference Search
IHD06N60RA datasheet
ihd06n60ra.pdf
IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos... See More ⇒
ihd06n60ra 1 3.pdf
IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos... See More ⇒
aihd06n60r.pdf
AIHD06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution ... See More ⇒
Specs: IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IKW50N60T , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 .
Keywords - IHD06N60RA transistor spec
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