IHW20T120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW20T120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 178 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 78 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IHW20T120 IGBT
IHW20T120 datasheet
ihw20t120 d09g.pdf
IHW20T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers - very tight parameter d
ihw20t120.pdf
IHW20T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers - very tight parameter d
ihw20n120r3 rev2 5g.pdf
IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi
ihw20n135r5.pdf
IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering G - very tight parameter distribution E - high ruggedness, temperature stable behav
Otros transistores... IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , CRG60T60AK3HD , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T .
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