IHW20T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW20T120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 178 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 78 pF

Encapsulados: TO247

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IHW20T120 datasheet

 ..1. Size:850K  infineon
ihw20t120 d09g.pdf pdf_icon

IHW20T120

IHW20T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers - very tight parameter d

 ..2. Size:847K  infineon
ihw20t120.pdf pdf_icon

IHW20T120

IHW20T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers - very tight parameter d

 9.1. Size:794K  infineon
ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20T120

IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi

 9.2. Size:1721K  infineon
ihw20n135r5.pdf pdf_icon

IHW20T120

IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering G - very tight parameter distribution E - high ruggedness, temperature stable behav

Otros transistores... IHW40N60T, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, GT30G124, IKW15N120T2, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3, IHW15N120R3, IKP04N60T