All IGBT. IHW20T120 Datasheet

 

IHW20T120 Datasheet and Replacement


   Type Designator: IHW20T120
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H20T120
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 178 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 78 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247
      - IGBT Cross-Reference

 

IHW20T120 Datasheet (PDF)

 ..1. Size:850K  infineon
 ihw20t120 d09g.pdf pdf_icon

IHW20T120

IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10s Designed for : - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers: - very tight parameter d

 ..2. Size:847K  infineon
 ihw20t120.pdf pdf_icon

IHW20T120

IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10s Designed for : - Soft Switching Applications G - Induction Heating E Trenchstop and Fieldstop technology for 1200 V applications offers: - very tight parameter d

 9.1. Size:794K  infineon
 ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20T120

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 9.2. Size:1721K  infineon
 ihw20n135r5.pdf pdf_icon

IHW20T120

IHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:G- very tight parameter distributionE- high ruggedness, temperature stable behav

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Datasheet: IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , SGT60N60FD1P7 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T .

History: HGTG30N60B3

Keywords - IHW20T120 transistor datasheet

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