IKW15N120T2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW15N120T2
Tipo de transistor: IGBT + Diode
Código de marcado: K15T1202
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 235 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 93 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW15N120T2 IGBT
IKW15N120T2 Datasheet (PDF)
ikw15n120t2 rev2 1.pdf
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Otros transistores... IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , CRG15T120BNR3S , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T .
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