IKW15N120T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW15N120T2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 235 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO247

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IKW15N120T2 datasheet

 ..1. Size:380K  infineon
 ikw15n120t2 rev2 1.pdf pdf_icon

IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parameter d

 ..2. Size:471K  infineon
 ikw15n120t2.pdf pdf_icon

IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very t

 5.1. Size:828K  infineon
 ikw15n120h3 rev1 2g.pdf pdf_icon

IKW15N120T2

IKW15N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app

 5.2. Size:2139K  infineon
 ikw15n120bh6.pdf pdf_icon

IKW15N120T2

IKW15N120BH6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi

MOSTRAR MÁS

Otros transistores... IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120, IRGP4086, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3, IHW15N120R3, IKP04N60T, IKP06N60T