IKW15N120T2 Datasheet. Specs and Replacement

Type Designator: IKW15N120T2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 235 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO247

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IKW15N120T2 datasheet

 ..1. Size:380K  infineon
 ikw15n120t2 rev2 1.pdf pdf_icon

IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parameter d... See More ⇒

 ..2. Size:471K  infineon
 ikw15n120t2.pdf pdf_icon

IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very t... See More ⇒

 5.1. Size:828K  infineon
 ikw15n120h3 rev1 2g.pdf pdf_icon

IKW15N120T2

IKW15N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app... See More ⇒

 5.2. Size:2139K  infineon
 ikw15n120bh6.pdf pdf_icon

IKW15N120T2

IKW15N120BH6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi... See More ⇒

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Specs: IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120, IRGP4086, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3, IHW15N120R3, IKP04N60T, IKP06N60T

Keywords - IKW15N120T2 transistor spec

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