Справочник IGBT. IKW15N120T2

 

IKW15N120T2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IKW15N120T2
   Тип транзистора: IGBT + Diode
   Маркировка: K15T1202
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 235 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 25 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Qgⓘ - Общий заряд затвора, typ: 93 nC
   Тип корпуса: TO247

 Аналог (замена) для IKW15N120T2

 

 

IKW15N120T2 Datasheet (PDF)

 ..1. Size:380K  infineon
 ikw15n120t2 rev2 1.pdf

IKW15N120T2 IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very tight parameter d

 ..2. Size:471K  infineon
 ikw15n120t2.pdf

IKW15N120T2 IKW15N120T2

IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t

 5.1. Size:828K  infineon
 ikw15n120h3 rev1 2g.pdf

IKW15N120T2 IKW15N120T2

IKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app

 5.2. Size:2139K  infineon
 ikw15n120bh6.pdf

IKW15N120T2 IKW15N120T2

IKW15N120BH6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi

 5.3. Size:2282K  infineon
 ikw15n120h3.pdf

IKW15N120T2 IKW15N120T2

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW15N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:

Другие IGBT... IHW40T60 , IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , SGT50T65FD1PN , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T .

 

 
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