IHW20N120R3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW20N120R3

Código: H20R1203

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 310

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.48

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Capacitancia de salida (Cc), pF: 50

Empaquetado / Estuche: TO247

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IHW20N120R3 Datasheet (PDF)

..1. ihw20n120r3 rev2 5g.pdf Size:794K _infineon

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

..2. ihw20n120r3.pdf Size:2179K _infineon

Induction Heating SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Induction Heating SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers: - very tight

4.1. ihw20n120r5.pdf Size:1956K _infineon

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

4.2. ihw20n120r2 h20r1202.pdf Size:551K _infineon

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

 7.1. ihw20n135r5.pdf Size:1952K _infineon

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N135R5Data sheetIndustrial Power ControlIHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation

7.2. ihw20n135r3.pdf Size:1531K _infineon

IH-seriesReverse conducting IGBT with monolithic body diodeIHW20N135R3DatasheetIndustrial & MultimarketIHW20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt

Otros transistores... IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IRGP4068D , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 .