IHW20N120R3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IHW20N120R3 Specs and Replacement

The IHW20N120R3 is a high-voltage IGBT designed for efficient switching in medium- and high-power applications. The device is rated for a collector-emitter voltage of 1200V and a continuous collector current of approximately 40A, making it suitable for industrial power electronics. This IGBT features a trench gate and field-stop technology, which significantly reduces switching losses and improves efficiency, especially in hard-switching topologies. The low Vce(sat) contributes to reduced conduction losses, while the optimized tail current behavior enhances performance in PWM-controlled systems. The IHW20N120R3 is commonly used in motor drives, uninterruptible power supplies, welding equipment, inverter systems.

Type Designator: IHW20N120R3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 310 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.48 V @25℃

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO247

IHW20N120R3 Substitution

- IGBT ⓘ Cross-Reference Search

IHW20N120R3 datasheet

..1. Size:794K infineon
ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi... See More ⇒

..2. Size:1861K infineon
ihw20n120r3.pdf pdf_icon

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight ... See More ⇒

4.1. Size:551K infineon
ihw20n120r2 h20r1202.pdf pdf_icon

H20R1202 H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - hig... See More ⇒

4.2. Size:1903K infineon
ihw20n120r5.pdf pdf_icon

Resonant Switching Series Reverse Conducting IGBT with monolithic body diode IHW20N120R5 Data sheet Industrial Power Control IHW20N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distri... See More ⇒