Справочник IGBT. IHW20N120R3

 

IHW20N120R3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IHW20N120R3
   Тип транзистора: IGBT + Diode
   Маркировка: H20R1203
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.48 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 50 pF
   Qgⓘ - Общий заряд затвора, typ: 211 nC
   Тип корпуса: TO247

 Аналог (замена) для IHW20N120R3

 

 

IHW20N120R3 Datasheet (PDF)

 ..1. Size:794K  infineon
 ihw20n120r3 rev2 5g.pdf

IHW20N120R3 IHW20N120R3

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

 ..2. Size:1861K  infineon
 ihw20n120r3.pdf

IHW20N120R3 IHW20N120R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight

 4.1. Size:551K  infineon
 ihw20n120r2 h20r1202.pdf

IHW20N120R3 IHW20N120R3

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

 4.2. Size:1903K  infineon
 ihw20n120r5.pdf

IHW20N120R3 IHW20N120R3

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

 7.1. Size:1721K  infineon
 ihw20n135r5.pdf

IHW20N120R3 IHW20N120R3

IHW20N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:G- very tight parameter distributionE- high ruggedness, temperature stable behav

 7.2. Size:1531K  infineon
 ihw20n135r3.pdf

IHW20N120R3 IHW20N120R3

IH-seriesReverse conducting IGBT with monolithic body diodeIHW20N135R3DatasheetIndustrial & MultimarketIHW20N135R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltage G designed for soft commutation onlyE TrenchSt

Другие IGBT... IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , CRG60T60AK3HD , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 .

 

 
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