SKP10N60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKP10N60A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 92 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 62 pF
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
SKP10N60A Datasheet (PDF)
skp10n60a.pdf

SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig
skp10n60a skw10n60a.pdf

SKP10N60A SKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig
Otros transistores... IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , RJH60F5DPQ-A0 , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 .
History: STGWA60NC60WDR | RJP60F4DPM | GT30G131 | IKW30N100T | IRG4PF50WD | KGF75N60KDB | IRGP35B60PD-EP
History: STGWA60NC60WDR | RJP60F4DPM | GT30G131 | IKW30N100T | IRG4PF50WD | KGF75N60KDB | IRGP35B60PD-EP



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