SKP10N60A Datasheet. Specs and Replacement
Type Designator: SKP10N60A 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 92 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 62 pF
Package: TO220
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SKP10N60A datasheet
skp10n60a.pdf
SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generation C combined with low conduction losses Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - hig... See More ⇒
skp10n60a skw10n60a.pdf
SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - hig... See More ⇒
Specs: IKP04N60T, IKP06N60T, IKP10N60T, IKP15N60T, IKP20N60T, SKP02N60, SKP04N60, SKP06N60, RJH30E2DPP, SKP15N60, IKP01N120H2, IKP03N120H2, SKP02N120, IHY15N120R3, IHY20N120R3, IHY30N160R2, IKW15N120H3
Keywords - SKP10N60A transistor spec
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History: RGT40TS65D
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