All IGBT. SKP10N60A Datasheet

 

SKP10N60A IGBT. Datasheet pdf. Equivalent


   Type Designator: SKP10N60A
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K10N60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 92 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 62 pF
   Qgⓘ - Total Gate Charge, typ: 52 nC
   Package: TO220

 SKP10N60A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKP10N60A Datasheet (PDF)

 ..1. Size:442K  infineon
skp10n60a.pdf

SKP10N60A
SKP10N60A

SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig

 ..2. Size:363K  infineon
skp10n60a skw10n60a.pdf

SKP10N60A
SKP10N60A

SKP10N60A SKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig

Datasheet: IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , RJH3047 , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 .

 

 
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