IKP01N120H2 Todos los transistores

 

IKP01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKP01N120H2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 28 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 6.3 nS
   Coesⓘ - Capacitancia de salida, typ: 9.8 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IKP01N120H2 Datasheet (PDF)

 ..1. Size:416K  infineon
 ikp01n120h2.pdf pdf_icon

IKP01N120H2

IKP01N120H2, IKB01N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for: C- SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D-PAK)- temperatu

 ..2. Size:824K  infineon
 ikp01n120h2 rev2 4g.pdf pdf_icon

IKP01N120H2

IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-220-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel s

Otros transistores... IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , TGPF30N43P , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 .

History: IKD04N60RF | KGT30N120NDA | DGC50F65M2 | KGT15N120NDA | STGW20NB60H | IXGX82N120B3 | IXA12IF1200TC

 

 
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