IKP01N120H2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKP01N120H2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 28 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 6.3 nS

Coesⓘ - Capacitancia de salida, typ: 9.8 pF

Encapsulados: TO220

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IKP01N120H2 datasheet

 ..1. Size:416K  infineon
 ikp01n120h2.pdf pdf_icon

IKP01N120H2

IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for C - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D -PAK) - temperatu

 ..2. Size:824K  infineon
 ikp01n120h2 rev2 4g.pdf pdf_icon

IKP01N120H2

IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers PG-TO-220-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel s

Otros transistores... IKP10N60T, IKP15N60T, IKP20N60T, SKP02N60, SKP04N60, SKP06N60, SKP10N60A, SKP15N60, SGT40N60FD2PT, IKP03N120H2, SKP02N120, IHY15N120R3, IHY20N120R3, IHY30N160R2, IKW15N120H3, IKW25N120H3, IKW40N120H3