IKP01N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP01N120H2
Tipo de transistor: IGBT + Diode
Código de marcado: K01H1202
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 3.2 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 3.9 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 6.3 nS
Coesⓘ - Capacitancia de salida, typ: 9.8 pF
Qgⓘ - Carga total de la puerta, typ: 8.6 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de IKP01N120H2 IGBT
IKP01N120H2 Datasheet (PDF)
ikp01n120h2.pdf
IKP01N120H2, IKB01N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for: C- SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D-PAK)- temperatu
ikp01n120h2 rev2 4g.pdf
IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-220-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel s
Otros transistores... IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , TGD30N40P , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 .
History: IHY20N120R3
History: IHY20N120R3
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