IKP01N120H2 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP01N120H2
Type: IGBT + Anti-Parallel Diode
Marking Code: K01H1202
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 28 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 3.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 6.3 nS
Coesⓘ - Output Capacitance, typ: 9.8 pF
Qgⓘ - Total Gate Charge, typ: 8.6 nC
Package: TO220
IKP01N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP01N120H2 Datasheet (PDF)
ikp01n120h2.pdf
IKP01N120H2, IKB01N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Designed for: C- SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D-PAK)- temperatu
ikp01n120h2 rev2 4g.pdf
IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: PG-TO-220-3-1 - loss reduction in resonant circuits - temperature stable behavior - parallel s
Datasheet: IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , TGPF30N43P , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2