SKP02N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKP02N120
Tipo de transistor: IGBT + Diode
Código de marcado: K02N120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.2 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 28 pF
Qgⓘ - Carga total de la puerta, typ: 11 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SKP02N120 IGBT
SKP02N120 Datasheet (PDF)
skp02n120.pdf
SKP02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeAllowed number of short circuits: 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter- SMPS NPT-Technology offers:PG-TO-220-3-1- very tig
skp02n60.pdf
SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggednes
Otros transistores... IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , CRG75T60AK3HD , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R .
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