SKP02N120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKP02N120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 62 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 28 pF

Encapsulados: TO220

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SKP02N120 datasheet

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 skp02n120.pdf pdf_icon

SKP02N120

SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter - SMPS NPT-Technology offers PG-TO-220-3-1 - very tig

 8.1. Size:347K  infineon
 skp02n60.pdf pdf_icon

SKP02N120

SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggednes

Otros transistores... IKP20N60T, SKP02N60, SKP04N60, SKP06N60, SKP10N60A, SKP15N60, IKP01N120H2, IKP03N120H2, YGW40N65F1A1, IHY15N120R3, IHY20N120R3, IHY30N160R2, IKW15N120H3, IKW25N120H3, IKW40N120H3, IKD10N60R, IKU10N60R