SKP02N120 Datasheet and Replacement
Type Designator: SKP02N120
Type: IGBT + Anti-Parallel Diode
Marking Code: K02N120
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 62 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 28 pF
Qg ⓘ - Total Gate Charge, typ: 11 nC
Package: TO220
SKP02N120 substitution
SKP02N120 Datasheet (PDF)
skp02n120.pdf
SKP02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeAllowed number of short circuits: 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter- SMPS NPT-Technology offers:PG-TO-220-3-1- very tig
skp02n60.pdf
SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggednes
Datasheet: IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , CRG75T60AK3HD , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R .
Keywords - SKP02N120 transistor datasheet
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