SKP02N120 Datasheet. Specs and Replacement

Type Designator: SKP02N120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 62 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 28 pF

Package: TO220

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SKP02N120 datasheet

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 skp02n120.pdf pdf_icon

SKP02N120

SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter - SMPS NPT-Technology offers PG-TO-220-3-1 - very tig... See More ⇒

 8.1. Size:347K  infineon
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SKP02N120

SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggednes... See More ⇒

Specs: IKP20N60T, SKP02N60, SKP04N60, SKP06N60, SKP10N60A, SKP15N60, IKP01N120H2, IKP03N120H2, YGW40N65F1A1, IHY15N120R3, IHY20N120R3, IHY30N160R2, IKW15N120H3, IKW25N120H3, IKW40N120H3, IKD10N60R, IKU10N60R

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