IKU10N60R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKU10N60R  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 37 pF

Encapsulados: TO251

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IKU10N60R datasheet

 ..1. Size:1800K  infineon
 iku10n60r.pdf pdf_icon

IKU10N60R

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R

 ..2. Size:1850K  infineon
 ikd10n60r iku10n60r.pdf pdf_icon

IKU10N60R

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R

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