IKU10N60R Specs and Replacement
Type Designator: IKU10N60R
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 10 nS
Coesⓘ - Output Capacitance, typ: 37 pF
Package: TO251
IKU10N60R Substitution - IGBT ⓘ Cross-Reference Search
IKU10N60R datasheet
iku10n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R... See More ⇒
ikd10n60r iku10n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R... See More ⇒
Specs: SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , TGPF30N43P , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 .
Keywords - IKU10N60R transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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