IKW50N60H3 Todos los transistores

 

IKW50N60H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW50N60H3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 333 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 37 nS

Coesⓘ - Capacitancia de salida, typ: 116 pF

Encapsulados: TO247

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IKW50N60H3 datasheet

 ..1. Size:2179K  infineon
ikw50n60h3.pdf pdf_icon

IKW50N60H3

 ..2. Size:1642K  infineon
ikw50n60h3 rev1 1g.pdf pdf_icon

IKW50N60H3

 6.1. Size:1551K  infineon
ikw50n60dtp.pdf pdf_icon

IKW50N60H3

IGBT TRENCHSTOP Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW50N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losse

 6.2. Size:1971K  infineon
aikw50n60ct.pdf pdf_icon

IKW50N60H3

AIKW50N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor

Otros transistores... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW40N65WR5 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

History: IKP20N60H3 | MMG600K120U6HN | MMG600K120U6TN

 

 

 


 
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