IKW50N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW50N60H3
Tipo de transistor: IGBT + Diode
Código de marcado: K50H603
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 333 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 37 nS
Coesⓘ - Capacitancia de salida, typ: 116 pF
Qgⓘ - Carga total de la puerta, typ: 315 nC
Paquete / Cubierta: TO247
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IKW50N60H3 Datasheet (PDF)
ikw50n60h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikw50n60h3 rev1 1g.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
ikw50n60dtp.pdf

IGBTTRENCHSTOP Performance technology copacked with RAPID 1fast anti-parallel diodeIKW50N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW50N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losse
aikw50n60ct.pdf

AIKW50N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Otros transistores... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IRG4PF50W , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .
History: FGPF4633 | GT30F124



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