IKW50N60H3 Todos los transistores

 

IKW50N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW50N60H3

Tipo de transistor: IGBT

Código de marcado: K50H603

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 333

Tensión máxima colector-emisor |Vce|, V: 600

Colector de Corriente Continua a 25℃ |Ic|, A: 100

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85

Paquete / Cubierta: TO247

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IKW50N60H3 Datasheet (PDF)

 ..1. Size:1642K  infineon
ikw50n60h3 rev1 1g.pdf

IKW50N60H3 IKW50N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 ..2. Size:2179K  infineon
ikw50n60h3.pdf

IKW50N60H3 IKW50N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.1. Size:1551K  infineon
ikw50n60dtp.pdf

IKW50N60H3 IKW50N60H3

IGBTTRENCHSTOP Performance technology copacked with RAPID 1fast anti-parallel diodeIKW50N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW50N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losse

 6.2. Size:412K  infineon
ikw50n60trev2 4g.pdf

IKW50N60H3 IKW50N60H3

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field

 6.3. Size:416K  infineon
ikw50n60t.pdf

IKW50N60H3 IKW50N60H3

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog

 6.4. Size:1971K  infineon
aikw50n60ct.pdf

IKW50N60H3 IKW50N60H3

AIKW50N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

Otros transistores... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IRGB4630D , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

 

 
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