IKW50N60H3 Datasheet. Specs and Replacement
Type Designator: IKW50N60H3 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 116 pF
Package: TO247
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IKW50N60H3 Substitution
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IKW50N60H3 datasheet
ikw50n60dtp.pdf
IGBT TRENCHSTOP Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW50N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losse... See More ⇒
aikw50n60ct.pdf
AIKW50N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒
Specs: IKD06N60R, IKU06N60R, IKW20N60H3, IKW30N60H3, IHW40N60RF, IHW30N110R3, IKW40N60H3, IKB20N60H3, IKW40N65WR5, IKP20N60H3, IHY20N135R3, IKD03N60RF, IKD04N60RF, IHW20N135R3, SGP10N60A, SGB02N60, SGB02N120
Keywords - IKW50N60H3 transistor spec
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