SGP30N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGP30N60
Tipo de transistor: IGBT
Código de marcado: G30N60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Qgⓘ - Carga total de la puerta, typ: 140 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SGP30N60 - IGBT
SGP30N60 Datasheet (PDF)
sgp30n60 sgw30n60 rev2 5g.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60 sgw30n60 rev2.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60 sgw30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
sgp30n60hs.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60hs sgw30n60hs rev2.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60hs sgw30n60hs rev2 4g.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
Otros transistores... SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , IXGH60N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS .
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