SGP30N60
IGBT. Datasheet pdf. Equivalent
Type Designator: SGP30N60
Type: IGBT
Marking Code: G30N60
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 250
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 41
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.1
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 34
nS
Coesⓘ - Output Capacitance, typ: 150
pF
Qgⓘ -
Total Gate Charge, typ: 140
nC
Package:
TO220
SGP30N60
Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGP30N60
Datasheet (PDF)
..1. Size:361K infineon
sgp30n60 sgw30n60 rev2 5g.pdf 
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
..2. Size:345K infineon
sgp30n60 sgw30n60 rev2.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
..3. Size:384K infineon
sgp30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
..4. Size:330K infineon
sgp30n60 sgw30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
0.1. Size:354K infineon
sgp30n60hs.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
0.2. Size:356K infineon
sgp30n60hs sgw30n60hs rev2.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
0.3. Size:383K infineon
sgp30n60hs sgw30n60hs rev2 4g.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
Datasheet: SGW20N60
, SGB30N60
, SGW30N60
, SGP02N60
, SGP04N60
, SGP06N60
, SGP15N60
, SGP20N60
, BT40T60ANF
, SGI02N120
, SGP02N120
, SGP07N120
, SGP15N120
, SGB15N60HS
, SGW20N60HS
, SGW30N60HS
, SGW50N60HS
.
