Справочник IGBT. SGP30N60

 

SGP30N60 Даташит. Аналоги. Параметры и характеристики.


   Наименование: SGP30N60
   Тип транзистора: IGBT
   Маркировка: G30N60
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 34 nS
   Coesⓘ - Выходная емкость, типовая: 150 pF
   Qg ⓘ - Общий заряд затвора, typ: 140 nC
   Тип корпуса: TO220
 

 Аналог (замена) для SGP30N60

   - подбор ⓘ IGBT транзистора по параметрам

 

SGP30N60 Datasheet (PDF)

 ..1. Size:361K  infineon
 sgp30n60 sgw30n60 rev2 5g.pdf pdf_icon

SGP30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..2. Size:345K  infineon
 sgp30n60 sgw30n60 rev2.pdf pdf_icon

SGP30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..3. Size:384K  infineon
 sgp30n60.pdf pdf_icon

SGP30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..4. Size:330K  infineon
 sgp30n60 sgw30n60.pdf pdf_icon

SGP30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGT40N60NPFDPN , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS .

 

 
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