SGW30N60HS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGW30N60HS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO247

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SGW30N60HS datasheet

 ..1. Size:356K  infineon
 sgp30n60hs sgw30n60hs rev2.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..2. Size:383K  infineon
 sgp30n60hs sgw30n60hs rev2 4g.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..3. Size:384K  infineon
 sgw30n60hs.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 6.1. Size:384K  infineon
 sgw30n60.pdf pdf_icon

SGW30N60HS

SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

MOSTRAR MÁS

Otros transistores... SGP20N60, SGP30N60, SGI02N120, SGP02N120, SGP07N120, SGP15N120, SGB15N60HS, SGW20N60HS, IKW75N60T, SGW50N60HS, SGP20N60HS, SGP30N60HS, IGB01N120H2, IGD01N120H2, IGA03N120H2, IGB03N120H2, IGW03N120H2