Справочник IGBT. SGW30N60HS

 

SGW30N60HS Даташит. Аналоги. Параметры и характеристики.


   Наименование: SGW30N60HS
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 150 pF
   Тип корпуса: TO247
 

 Аналог (замена) для SGW30N60HS

   - подбор ⓘ IGBT транзистора по параметрам

 

SGW30N60HS Datasheet (PDF)

 ..1. Size:356K  infineon
 sgp30n60hs sgw30n60hs rev2.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..2. Size:383K  infineon
 sgp30n60hs sgw30n60hs rev2 4g.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..3. Size:384K  infineon
 sgw30n60hs.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 6.1. Size:384K  infineon
 sgw30n60.pdf pdf_icon

SGW30N60HS

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , GT30G124 , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 .

History: 1MBI2400U4D-120 | 7MBP50VDA060-50 | MMGTU75J120U

 

 
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