SGW30N60HS datasheet, аналоги, основные параметры

Наименование: SGW30N60HS  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃

tr ⓘ - Время нарастания типовое: 21 nS

Coesⓘ - Выходная емкость, типовая: 150 pF

Тип корпуса: TO247

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 Аналог (замена) для SGW30N60HS

- подбор ⓘ IGBT транзистора по параметрам

 

SGW30N60HS даташит

 ..1. Size:356K  infineon
 sgp30n60hs sgw30n60hs rev2.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..2. Size:383K  infineon
 sgp30n60hs sgw30n60hs rev2 4g.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..3. Size:384K  infineon
 sgw30n60hs.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 6.1. Size:384K  infineon
 sgw30n60.pdf pdf_icon

SGW30N60HS

SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGP20N60, SGP30N60, SGI02N120, SGP02N120, SGP07N120, SGP15N120, SGB15N60HS, SGW20N60HS, IKW75N60T, SGW50N60HS, SGP20N60HS, SGP30N60HS, IGB01N120H2, IGD01N120H2, IGA03N120H2, IGB03N120H2, IGW03N120H2