All IGBT. SGW30N60HS Datasheet

 

SGW30N60HS Datasheet and Replacement


   Type Designator: SGW30N60HS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247
      - IGBT Cross-Reference

 

SGW30N60HS Datasheet (PDF)

 ..1. Size:356K  infineon
 sgp30n60hs sgw30n60hs rev2.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..2. Size:383K  infineon
 sgp30n60hs sgw30n60hs rev2 4g.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 ..3. Size:384K  infineon
 sgw30n60hs.pdf pdf_icon

SGW30N60HS

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

 6.1. Size:384K  infineon
 sgw30n60.pdf pdf_icon

SGW30N60HS

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

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Datasheet: SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , IRG7IC28U , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 .

History: IRGC16B60KB

Keywords - SGW30N60HS transistor datasheet

 SGW30N60HS cross reference
 SGW30N60HS equivalent finder
 SGW30N60HS lookup
 SGW30N60HS substitution
 SGW30N60HS replacement

 

 
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