SGW50N60HS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGW50N60HS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 416 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 32 nS

Coesⓘ - Capacitancia de salida, typ: 245 pF

Encapsulados: TO247

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SGW50N60HS datasheet

 ..1. Size:350K  infineon
 sgw50n60hs.pdf pdf_icon

SGW50N60HS

SGW50N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

 0.1. Size:350K  infineon
 sgw50n60hsg.pdf pdf_icon

SGW50N60HS

SGW50N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

Otros transistores... SGP30N60, SGI02N120, SGP02N120, SGP07N120, SGP15N120, SGB15N60HS, SGW20N60HS, SGW30N60HS, RJP30E2DPP-M0, SGP20N60HS, SGP30N60HS, IGB01N120H2, IGD01N120H2, IGA03N120H2, IGB03N120H2, IGW03N120H2, IGP01N120H2