SGW50N60HS IGBT. Datasheet pdf. Equivalent
Type Designator: SGW50N60HS
Type: IGBT
Marking Code: G50N60HS
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Qgⓘ - Total Gate Charge, typ: 179 nC
Package: TO247
SGW50N60HS Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGW50N60HS Datasheet (PDF)
sgw50n60hs.pdf
SGW50N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes
sgw50n60hsg.pdf
SGW50N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes
Datasheet: SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , IRG7IC28U , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 .
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