IGA03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGA03N120H2
Tipo de transistor: IGBT
Código de marcado: G03H1202
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 29 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8.2 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 3.9 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 5.2 nS
Coesⓘ - Capacitancia de salida, typ: 24 pF
Qgⓘ - Carga total de la puerta, typ: 8.6 nC
Paquete / Cubierta: TO220F
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IGA03N120H2 Datasheet (PDF)
iga03n120h2.pdf
IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control
iga03n120h2g.pdf
IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control
Otros transistores... SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , RJH30E2DPP , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 .
History: SGT60U65FD1PN
History: SGT60U65FD1PN
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