IGA03N120H2 Datasheet and Replacement
Type Designator: IGA03N120H2
Type: IGBT
Marking Code: G03H1202
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 29 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 8.2 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.9 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Qgⓘ - Total Gate Charge, typ: 8.6 nC
Package: TO220F
- IGBT Cross-Reference
IGA03N120H2 Datasheet (PDF)
iga03n120h2.pdf
IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control
iga03n120h2g.pdf
IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control
Datasheet: SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , RJH30E2DPP , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 .
History: IXGQ50N60C4D1 | HGTG18N120BND | IXGH24N60B | IXGQ20N120B | IGW40N60H3
Keywords - IGA03N120H2 transistor datasheet
IGA03N120H2 cross reference
IGA03N120H2 equivalent finder
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History: IXGQ50N60C4D1 | HGTG18N120BND | IXGH24N60B | IXGQ20N120B | IGW40N60H3
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