IGA03N120H2 Specs and Replacement
Type Designator: IGA03N120H2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 29 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8.2 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 5.2 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Package: TO220F
IGA03N120H2 Substitution - IGBT ⓘ Cross-Reference Search
IGA03N120H2 datasheet
iga03n120h2.pdf
IGA03N120H2 HighSpeed 2-Technology C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control... See More ⇒
iga03n120h2g.pdf
IGA03N120H2 HighSpeed 2-Technology C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control... See More ⇒
Specs: SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IKW75N60T , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 .
History: IGB03N120H2
Keywords - IGA03N120H2 transistor spec
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History: IGB03N120H2
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