IGW50N60H3 Todos los transistores

 

IGW50N60H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW50N60H3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 333 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 37 nS

Coesⓘ - Capacitancia de salida, typ: 116 pF

Encapsulados: TO247

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IGW50N60H3 datasheet

 ..1. Size:1988K  infineon
igw50n60h3.pdf pdf_icon

IGW50N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 ..2. Size:1559K  infineon
igw50n60h3 rev1 2g.pdf pdf_icon

IGW50N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G

 6.1. Size:1457K  infineon
igw50n60tp.pdf pdf_icon

IGW50N60H3

IGBT TRENCHSTOPTM Performance technology IGW50N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW50N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat

 6.2. Size:448K  infineon
igp50n60t igw50n60t rev2 6g.pdf pdf_icon

IGW50N60H3

IGP50N60T TrenchStop Series IGW50N60T Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers P

Otros transistores... IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , RJH30E2DPP , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T .

 

 

 


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