IGW50N60H3 Todos los transistores

 

IGW50N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW50N60H3
   Tipo de transistor: IGBT
   Código de marcado: G50H603
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 333 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 37 nS
   Coesⓘ - Capacitancia de salida, typ: 116 pF
   Qgⓘ - Carga total de la puerta, typ: 315 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW50N60H3 Datasheet (PDF)

 ..1. Size:1988K  infineon
 igw50n60h3.pdf pdf_icon

IGW50N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 ..2. Size:1559K  infineon
 igw50n60h3 rev1 2g.pdf pdf_icon

IGW50N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

 6.1. Size:1457K  infineon
 igw50n60tp.pdf pdf_icon

IGW50N60H3

IGBTTRENCHSTOPTM Performance technologyIGW50N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW50N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat

 6.2. Size:448K  infineon
 igp50n60t igw50n60t rev2 6g.pdf pdf_icon

IGW50N60H3

IGP50N60T TrenchStop Series IGW50N60TLow Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : P

MOSTRAR MÁS

Otros transistores... IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , SGT40N60FD2PN , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T .

History: IXA60IF1200NA | IXGN50N60B | RJH30H1DPP-M0 | IXGK60N60B2D1 | APT15GP90K | IRGB4086 | IXBF12N300

 

 
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