IGW50N60H3 IGBT. Datasheet pdf. Equivalent
Type Designator: IGW50N60H3
Type: IGBT
Marking Code: G50H603
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 116 pF
Qgⓘ - Total Gate Charge, typ: 315 nC
Package: TO247
IGW50N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGW50N60H3 Datasheet (PDF)
igw50n60h3.pdf
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IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
Datasheet: IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , TGAN60N60F2DS , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T .
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