IGW50N60H3 - аналоги и описание IGBT

 

IGW50N60H3 - аналоги, основные параметры, даташиты

Наименование: IGW50N60H3

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 333 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃

tr ⓘ - Время нарастания типовое: 37 nS

Coesⓘ - Выходная емкость, типовая: 116 pF

Тип корпуса: TO247

 Аналог (замена) для IGW50N60H3

- подбор ⓘ IGBT транзистора по параметрам

 

IGW50N60H3 даташит

 ..1. Size:1988K  infineon
igw50n60h3.pdfpdf_icon

IGW50N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 ..2. Size:1559K  infineon
igw50n60h3 rev1 2g.pdfpdf_icon

IGW50N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G

 6.1. Size:1457K  infineon
igw50n60tp.pdfpdf_icon

IGW50N60H3

IGBT TRENCHSTOPTM Performance technology IGW50N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW50N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat

 6.2. Size:448K  infineon
igp50n60t igw50n60t rev2 6g.pdfpdf_icon

IGW50N60H3

IGP50N60T TrenchStop Series IGW50N60T Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers P

Другие IGBT... IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , RJH30E2DPP , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T .

 

 

 

 

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