IGA30N60H3 Todos los transistores

 

IGA30N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGA30N60H3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 43 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 107 pF
   Paquete / Cubierta: TO220F
 

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IGA30N60H3 Datasheet (PDF)

 ..1. Size:1571K  infineon
 iga30n60h3.pdf pdf_icon

IGA30N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGA30N60H3High speed switching series third generationDatasheetIndustrial & MultimarketIGA30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

 ..2. Size:1615K  infineon
 iga30n60h3 rev2 1g.pdf pdf_icon

IGA30N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGA30N60H3High speed switching series third generationDatasheetIndustrial & MultimarketIGA30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

Otros transistores... IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IHW20N135R5 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 .

History: CT20ASL-8 | AIKW50N65DH5 | 1MBC03-120 | HGTP6N40E1D | MP6752

 

 
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