IGA30N60H3 Specs and Replacement
Type Designator: IGA30N60H3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 43 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 107 pF
Package: TO220F
IGA30N60H3 Substitution - IGBT ⓘ Cross-Reference Search
IGA30N60H3 datasheet
iga30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGA30N60H3 High speed switching series third generation Datasheet Industrial & Multimarket IGA30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G ... See More ⇒
iga30n60h3 rev2 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGA30N60H3 High speed switching series third generation Datasheet Industrial & Multimarket IGA30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G ... See More ⇒
Specs: IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , YGW60N65F1A1 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 .
Keywords - IGA30N60H3 transistor spec
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