IGA30N60H3 Datasheet and Replacement
Type Designator: IGA30N60H3
Type: IGBT
Marking Code: G30H603
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 43 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 107 pF
Qgⓘ - Total Gate Charge, typ: 165 nC
Package: TO220F
- IGBT Cross-Reference
IGA30N60H3 Datasheet (PDF)
iga30n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGA30N60H3High speed switching series third generationDatasheetIndustrial & MultimarketIGA30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
iga30n60h3 rev2 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGA30N60H3High speed switching series third generationDatasheetIndustrial & MultimarketIGA30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
Datasheet: IGP03N120H2 , IGW25N120H3 , IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , RJH3047 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 .
History: SGP13N60UFD | HGTP3N60A4D | AIKW40N65DH5
Keywords - IGA30N60H3 transistor datasheet
IGA30N60H3 cross reference
IGA30N60H3 equivalent finder
IGA30N60H3 lookup
IGA30N60H3 substitution
IGA30N60H3 replacement
History: SGP13N60UFD | HGTP3N60A4D | AIKW40N65DH5



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